DARPA is seeking research proposals to investigate the impact of extreme physical stresses on wear-out and aging mechanisms in CMOS FETs at 28nm and/or 14nm. The goal of Phase III of the IRIS Program is to develop predictive models for aging effects in transistors and interconnects, and to enhance the accuracy and efficiency of wear-out assessment. The ultimate aim is to expedite burn-in, aging, and wear-out processes. Check out the full details in DARPA-BAA-15-47 for more information. Submission deadline is on September 4, 2015.
Opportunity ID: 277928
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | DARPA-BAA-15-47 |
| Funding Opportunity Title: | Integrity and Reliability of Integrated CircuitS (IRIS), Phase III |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 1 |
| Posted Date: | Jul 17, 2015 |
| Last Updated Date: | – |
| Original Closing Date for Applications: | Sep 04, 2015 |
| Current Closing Date for Applications: | Sep 04, 2015 |
| Archive Date: | Mar 04, 2016 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | DARPA is soliciting research proposals for a comprehensive exploration of the effects of extreme physical stresses on wear-out and aging mechanisms in CMOS FETs at 28nm and/or 14nm lithography node. The objective of the IRIS Program Phase III is to explore aging effects in both transistors and transistor interconnects to create predictive models and to test how precisely and rapidly specific wear-out mechanisms can be asserted, for the purposes of accelerating burn-in, aging, and wear-out.
See the full DARPA-BAA-15-47 document attached. |
| Link to Additional Information: | DARPA Solicitations Page |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Mr. Kerry Bernstein
Program Manager Email:DARPA-BAA-15-47@darpa.mil |
Version History
| Version | Modification Description | Updated Date |
|---|---|---|
Related Documents
Folder 277928 Full Announcement-1 -> darpa-baa-15-47_attachment+1_proposer+checklist.pdf
Folder 277928 Full Announcement-1 -> darpa-baa-15-47_iris ph3_final for posting_17july2015.pdf
Packages
| Agency Contact Information: | Mr. Kerry Bernstein Program Manager Email: DARPA-BAA-15-47@darpa.mil |
| Who Can Apply: | Organization Applicants |
| Assistance Listing Number | Competition ID | Competition Title | Opportunity Package ID | Opening Date | Closing Date | Actions |
|---|---|---|---|---|---|---|
| 12.910 | PKG00217873 | Jul 17, 2015 | Sep 04, 2015 | View |
Package 1
Mandatory forms
277928 RR_SF424_2_0-2.0.pdf
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