The Dynamic Range-enhanced Electronics and Materials (DREaM) program is offering this grant to drive innovation in advanced electronics. This initiative focuses on exploiting novel materials and sophisticated device structures to create next-generation radio frequency (RF) transistors. The core objective is to enable asymmetric operations within the complex electromagnetic spectrum, significantly enhancing the performance and adaptability of electronic systems. By supporting research into new design paradigms, this grant aims to push the capabilities of RF technology, developing components with superior dynamic range and operational flexibility, which are critical for future communication and sensing applications.
Opportunity ID: 292806
General Information
Document Type: | Grants Notice |
Funding Opportunity Number: | HR001117S0024 |
Funding Opportunity Title: | Dynamic Range-enhanced Electronics and Materials (DREaM) |
Opportunity Category: | Discretionary |
Opportunity Category Explanation: | – |
Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
Category of Funding Activity: | Science and Technology and other Research and Development |
Category Explanation: | – |
Expected Number of Awards: | – |
Assistance Listings: | 12.910 — Research and Technology Development |
Cost Sharing or Matching Requirement: | No |
Version: | Synopsis 1 |
Posted Date: | Mar 28, 2017 |
Last Updated Date: | – |
Original Closing Date for Applications: | May 24, 2017 |
Current Closing Date for Applications: | May 24, 2017 |
Archive Date: | Nov 30, 2017 |
Estimated Total Program Funding: | – |
Award Ceiling: | – |
Award Floor: | – |
Eligibility
Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
Additional Information on Eligibility: | – |
Additional Information
Agency Name: | DARPA – Microsystems Technology Office |
Description: | The Dynamic Range-enhanced Electronics and Materials (DREaM) program will exploit new materials and novel device structures to create radio frequency (RF) transistors that enable asymmetric operations in a complex electromagnetic spectrum.
See the attached HR001117S0024 document. |
Link to Additional Information: | DARPA Solicitations Page |
Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Dr. Daniel Green
Program Manager Email:HR001117S0024@darpa.mil |
Version History
Version | Modification Description | Updated Date |
---|---|---|
Related Documents
Folder 292806 Full Announcement-HR001117S0024 -> HR001117S0024_DREaM_Attachment2_ProposalSummaryChartTemplate.pdf
Folder 292806 Full Announcement-HR001117S0024 -> HR001117S0024_DREaM_Final for posting_28MAR17.pdf
Folder 292806 Full Announcement-HR001117S0024 -> HR001117S0024_DREaM_Attachment1_ProposerChecklist.pdf
Packages
Agency Contact Information: | Dr. Daniel Green Program Manager Email: HR001117S0024@darpa.mil |
Who Can Apply: | Organization Applicants |
Assistance Listing Number | Competition ID | Competition Title | Opportunity Package ID | Opening Date | Closing Date | Actions |
---|---|---|---|---|---|---|
12.910 | PKG00231652 | Mar 28, 2017 | May 24, 2017 | View |
Package 1
Mandatory forms
292806 RR_SF424_2_0-2.0.pdf
292806 AttachmentForm_1_2-1.2.pdf
Optional forms
292806 SFLLL_1_2-1.2.pdf