This grant offered by DARPA aims to support innovative research and development proposals focusing on Spin-Torque Transfer Random Access Memory (STT-RAM) technologies. The goal is to develop materials and processes to fully utilize the spin-torque transfer phenomenon, creating universal memory elements with high storage capacity, speed, compatibility with CMOS processes, and non-volatility. Research should pioneer groundbreaking advances in science, devices, or systems, rather than incremental improvements. The program targets the core technology for leveraging spin-torque transfer effects for large-scale memory production, emphasizing compatibility with mainstream semiconductor processes. For proposal submission inquiries, contact BAA08-16@darpa.mil. Closing date: Apr 11, 2008.
Opportunity ID: 40833
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | BAA08-16 |
| Funding Opportunity Title: | Spin Torque Transfer-Random Access Memory (STT-RAM) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 2 |
| Posted Date: | Feb 26, 2008 |
| Last Updated Date: | Jan 08, 2009 |
| Original Closing Date for Applications: | Apr 11, 2008 |
| Current Closing Date for Applications: | Apr 11, 2008 |
| Archive Date: | Jan 09, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | DARPA is soliciting innovative research and development (R&D) proposals in the area of Spin-Torque Transfer Random Access Memory technologies. The goal of this program is to develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating universal memory elements. A universal memory element is one that exhibits scalability for high capacity of storage per unit volume, as well as high read/write speed, compatibility with CMOS processes, and non-volatility. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Prior research in micro-magnetics and spintronics has led to the exploitation of giant magnetoresistance (GMR) effects for rotating magnetic disk drive memories, as well as magnetic tunneling junctions (MTJ) for magnetic random access memory (MRAM). The spin-torque transfer (STT) effect is a recent discovery that exploits magnetic spin states to electrically change the magnetic orientation of a material (Science 285, 867 (1999)). Components based on the STT effect can have the properties of a universal memory, high density, high speed, non-volatility, high endurance, and can also be well suited for harsh environments such as those with exposure to ionizing radiation. In addition, they can operate from a single power supply voltage level greatly simplifying associated circuitry.This program is aimed at developing the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA08-16@darpa.mil.Full BAA attached. |
| Link to Additional Information: | DARPA MTO Solicitations Website |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Devanand Shenoy
Program Manager DARPA/MTO Email:baa08-16@darpa.mil |
Version History
| Version | Modification Description | Updated Date |
|---|---|---|
| Updating Archive Date | Jan 08, 2009 | |
| Jan 08, 2009 |
DISPLAYING: Synopsis 2
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | BAA08-16 |
| Funding Opportunity Title: | Spin Torque Transfer-Random Access Memory (STT-RAM) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 2 |
| Posted Date: | Feb 26, 2008 |
| Last Updated Date: | Jan 08, 2009 |
| Original Closing Date for Applications: | Apr 11, 2008 |
| Current Closing Date for Applications: | Apr 11, 2008 |
| Archive Date: | Jan 09, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | DARPA is soliciting innovative research and development (R&D) proposals in the area of Spin-Torque Transfer Random Access Memory technologies. The goal of this program is to develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating universal memory elements. A universal memory element is one that exhibits scalability for high capacity of storage per unit volume, as well as high read/write speed, compatibility with CMOS processes, and non-volatility. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Prior research in micro-magnetics and spintronics has led to the exploitation of giant magnetoresistance (GMR) effects for rotating magnetic disk drive memories, as well as magnetic tunneling junctions (MTJ) for magnetic random access memory (MRAM). The spin-torque transfer (STT) effect is a recent discovery that exploits magnetic spin states to electrically change the magnetic orientation of a material (Science 285, 867 (1999)). Components based on the STT effect can have the properties of a universal memory, high density, high speed, non-volatility, high endurance, and can also be well suited for harsh environments such as those with exposure to ionizing radiation. In addition, they can operate from a single power supply voltage level greatly simplifying associated circuitry.This program is aimed at developing the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA08-16@darpa.mil.Full BAA attached. |
| Link to Additional Information: | DARPA MTO Solicitations Website |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Devanand Shenoy
Program Manager DARPA/MTO Email:baa08-16@darpa.mil |
DISPLAYING: Synopsis 1
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | BAA08-16 |
| Funding Opportunity Title: | Spin Torque Transfer-Random Access Memory (STT-RAM) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 1 |
| Posted Date: | Jan 08, 2009 |
| Last Updated Date: | – |
| Original Closing Date for Applications: | – |
| Current Closing Date for Applications: | Apr 11, 2008 |
| Archive Date: | Mar 12, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | DARPA is soliciting innovative research and development (R&D) proposals in the area of Spin-Torque Transfer Random Access Memory technologies. The goal of this program is to develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating universal memory elements. A universal memory element is one that exhibits scalability for high capacity of storage per unit volume, as well as high read/write speed, compatibility with CMOS processes, and non-volatility. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice.
Prior research in micro-magnetics and spintronics has led to the exploitation of giant magnetoresistance (GMR) effects for rotating magnetic disk drive memories, as well as magnetic tunneling junctions (MTJ) for magnetic random access memory (MRAM). The spin-torque transfer (STT) effect is a recent discovery that exploits magnetic spin states to electrically change the magnetic orientation of a material (Science 285, 867 (1999)). Components based on the STT effect can have the properties of a universal memory, high density, high speed, non-volatility, high endurance, and can also be well suited for harsh environments such as those with exposure to ionizing radiation. In addition, they can operate from a single power supply voltage level greatly simplifying associated circuitry. This program is aimed at developing the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance. All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA08-16@darpa.mil. Full BAA attached. |
| Link to Additional Information: | DARPA MTO Solicitations Website |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Devanand Shenoy
Program Manager DARPA/MTO Email:baa08-16@darpa.mil |
Related Documents
Folder 40833 Full Announcement-1 -> Penta Chart Format.pdf
Folder 40833 Full Announcement-1 -> T-FIMS Instructions for Proposers.pdf
Folder 40833 Full Announcement-1 -> stt_ram_baa_08_16_v4__cmo_26feb08.pdf
Packages
| Agency Contact Information: | Devanand Shenoy Program Manager DARPA/MTO Email: baa08-16@darpa.mil |
| Who Can Apply: | Organization Applicants |
| Assistance Listing Number | Competition ID | Competition Title | Opportunity Package ID | Opening Date | Closing Date | Actions |
|---|---|---|---|---|---|---|
| 12.910 | PKG00006384 | Feb 26, 2008 | Apr 11, 2008 | View |
Package 1
Mandatory forms
40833 RR_SF424-1.1.pdf
Share This Post, Choose Your Platform!
About the Author: osnqt
